A High-temperature Silicon-on-insulator Gate Driver IC for Silicon Carbide Junction Field Effect Transistor

A High-temperature Silicon-on-insulator Gate Driver IC for Silicon Carbide Junction Field Effect Transistor

4.11 - 1251 ratings - Source



There has been an increasing research interest in silicon carbide (SiC) for power electronics applications. SiC has emerged as the most likely candidate to bring about the next breakthrough in terms of power density and high efficiency in power electronics. One of the factors contributing to the expected increase in power density is the ability of SiC to reliably operate at higher temperatures than current silicon (Si) based power electronics can.29 Figure 4.7 Low voltage doubler schematic representation 30 Figure 4.8 Layout of low voltage doubler circuit 31 Figure ... circuit 36 Figure 4.14 High voltage doubler simulation results at 25 AdC 37 Figure 4.15 High voltage inverter schematicanbsp;...


Title:A High-temperature Silicon-on-insulator Gate Driver IC for Silicon Carbide Junction Field Effect Transistor
Author: Edgar Santiago Cilio
Publisher:ProQuest - 2008
ISBN-13:

You must register with us as either a Registered User before you can Download this Book. You'll be greeted by a simple sign-up page.

Once you have finished the sign-up process, you will be redirected to your download Book page.

How it works:
  • 1. Register a free 1 month Trial Account.
  • 2. Download as many books as you like (Personal use)
  • 3. Cancel the membership at any time if not satisfied.


Click button below to register and download Ebook
Privacy Policy | Contact | DMCA